Scan Part Number

Tap the focus box or CAPTURE to scan the part number.

Pinch screen or tap 1.4x button to zoom.

Recognizing Part Number...

Rohm Semiconductor QS8M12TCR

  • QS8M12TCR
  • QS8M12TCR Power Field-Effect Transistor, 4A I(D), 30V, 0.063ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT8, 8 PIN; QS8M12TCR

    · Categories: IGBT
    · Manufacturer: Rohm Semiconductor
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
    Submit RFQ to Get Price
    · Date Code: Please Verify on Quote
    . Available Qty: 48
    MOQ: 1 PC
    Express Shipping
    90-Day Warranty
    1-2 Days Lead Time
    100% Tested
    Whatsapp: 0086 189 2465 1869

    Content last revised on August 19, 2023

    Manufacturer Part Number: QS8M12TCRPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Rohm CO LTDPackage Description: SMALL OUTLINE, R-PDSO-F8Pin Count: 8ECCN Code: EAR99Manufacturer: Rohm SemiconductorRisk Rank: 5.82Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (Abs) (ID): 4 ADrain Current-Max (ID): 4 ADrain-source On Resistance-Max: 0.063 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-F8JESD-609 Code: e2Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNEL AND P-CHANNELPower Dissipation-Max (Abs): 1.5 WPulsed Drain Current-Max (IDM): 12 AQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: TIN COPPERTerminal Form: FLATTerminal Position: DUALTime Power Field-Effect Transistor, 4A I(D), 30V, 0.063ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT8, 8 PIN

    v1.2.0