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Rohm Semiconductor RHU003N03T106

  • RHU003N03T106
  • RHU003N03T106 Small Signal Field-Effect Transistor, 0.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, UMT3, 3 PIN; RHU003N03T106

    · Categories: IGBT
    · Manufacturer: Rohm Semiconductor
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 3363
    MOQ: 1 PC
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    Content last revised on May 1, 2023

    Manufacturer Part Number: RHU003N03T106Pbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Rohm CO LTDPackage Description: SMALL OUTLINE, R-PDSO-G3Pin Count: 3ECCN Code: EAR99Manufacturer: Rohm SemiconductorRisk Rank: 7.92Configuration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (Abs) (ID): 0.3 ADrain Current-Max (ID): 0.3 ADrain-source On Resistance-Max: 2.3 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-G3JESD-609 Code: e1Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 0.2 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: TIN SILVER COPPERTerminal Form: GULL WINGTerminal Position: DUALTime Small Signal Field-Effect Transistor, 0.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, UMT3, 3 PIN