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Toshiba Semiconductor and Storage RN1901FETE85LF,RN1901FETE85LF pictures,RN1901FETE85LF supplier,RN1901FETE85LF stock
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Datasheets:RN190xFEProduct Photos:SOT-563Standard Package:4,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) - Single, Pre-BiasedSeries:-Packaging:Tape & Reel (TR)Transistor Type:NPN - Pre-BiasedCurrent - Collector (Ic) (Max):100mAVoltage - Collector Emitter Breakdown (Max):50VResistor - Base (R1) (Ohms):4.7kResistor - Emitter Base (R2) (Ohms):4.7kDC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 10mA, 5VVce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mACurrent - Collector Cutoff (Max):100nA (ICBO)Frequency - Transition:250MHzPower - Max:100mWMounting Type:Surface MountPackage / Case:SOT-563, SOT-666Supplier Device Package:ES6Dynamic Catalog:NPN Pre-biased TransistorsOther Names:RN1901FE(TE85L,F)RN1901FETE85LFTR
Toshiba Semiconductor and Storage RN1901FETE85LF New TRANS NPN 50V 100MA ES6, RN1901FETE85LF pictures, RN1901FETE85LF price, RN1901FETE85LF supplier
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TRANS NPN 50V 100MA ES6

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