Rohm Semiconductor RUQ050N02TR

  • RUQ050N02TR

RUQ050N02TR Power Field-Effect Transistor, 5A I(D), 20V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT6, 6 PIN; RUQ050N02TR

· Categories: IGBT
· Manufacturer: Rohm Semiconductor
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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. Available Qty: 2739
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Content last revised on November 20, 2023

Manufacturer Part Number: RUQ050N02TRPbfree Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: Rohm CO LTDPackage Description: SMALL OUTLINE, R-PDSO-G6Pin Count: 6ECCN Code: EAR99Manufacturer: ROHM SemiconductorRisk Rank: 7.83Configuration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 20 VDrain Current-Max (Abs) (ID): 5 ADrain Current-Max (ID): 5 ADrain-source On Resistance-Max: 0.038 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-G6JESD-609 Code: e1Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 1.25 WPulsed Drain Current-Max (IDM): 10 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)Terminal Form: GULL WINGTerminal Position: DUALTime Power Field-Effect Transistor, 5A I(D), 20V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT6, 6 PIN