#Vishay Siliconix, #SI3905DV_T1_E3, #IGBT_Module, #IGBT, SI3905DV-T1-E3 Small Signal Field-Effect Transistor, 8V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, M
Manufacturer Part Number: SI3905DV-T1-E3Part Life Cycle Code: ObsoleteIhs Manufacturer: VISHAY SILICONIXPart Package Code: TSOPPackage Description: SMALL OUTLINE, R-PDSO-G6Pin Count: 6ECCN Code: EAR99Manufacturer: Vishay SiliconixRisk Rank: 5.32Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 8 VDrain-source On Resistance-Max: 0.125 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: MO-193CJESD-30 Code: R-PDSO-G6JESD-609 Code: e3Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPolarity/Channel Type: P-CHANNELQualification Status: Not QualifiedSurface Mount: YESTerminal Finish: MATTE TINTerminal Form: GULL WINGTerminal Position: DUALTransistor Element Material: SILICON Small Signal Field-Effect Transistor, 8V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193C, ROHS COMPLIANT, TSOP-6