#Vishay Siliconix, #SI4563DY_T1_GE3, #IGBT_Module, #IGBT, SI4563DY-T1-GE3 Small Signal Field-Effect Transistor, 8A I(D), 40V, 2-Element, N-Channel and P-Channel, Silicon, Metal-o
Manufacturer Part Number: SI4563DY-T1-GE3Rohs Code: YesPart Life Cycle Code: TransferredIhs Manufacturer: VISHAY SILICONIXPart Package Code: SOTPackage Description: SMALL OUTLINE, R-PDSO-G8Pin Count: 8ECCN Code: EAR99Manufacturer: Vishay SiliconixRisk Rank: 5.3Configuration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 40 VDrain Current-Max (ID): 8 ADrain-source On Resistance-Max: 0.016 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-G8JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNEL AND P-CHANNELQualification Status: Not QualifiedSurface Mount: YESTerminal Finish: PURE MATTE TINTerminal Form: GULL WINGTerminal Position: DUALTime Small Signal Field-Effect Transistor, 8A I(D), 40V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8