#Vishay Siliconix, #SI4834BDY_T1_GE3, #IGBT_Module, #IGBT, SI4834BDY-T1-GE3 Small Signal Field-Effect Transistor, 5.7A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semico
Manufacturer Part Number: SI4834BDY-T1-GE3Part Life Cycle Code: ObsoleteIhs Manufacturer: VISHAY SILICONIXPart Package Code: SOTPackage Description: SMALL OUTLINE, R-PDSO-G8Pin Count: 8ECCN Code: EAR99Manufacturer: Vishay SiliconixRisk Rank: 5.69Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (ID): 5.7 ADrain-source On Resistance-Max: 0.022 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-G8Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: YESTerminal Form: GULL WINGTerminal Position: DUALTransistor Application: SWITCHINGTransistor Element Material: SILICON Small Signal Field-Effect Transistor, 5.7A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8