#Vishay Siliconix, #SI4967DY_T1_E3, #IGBT_Module, #IGBT, SI4967DY-T1-E3 Trans MOSFET P-CH 12V 7.5A 8-Pin SOIC N T/R; SI4967DY-T1-E3
Manufacturer Part Number: SI4967DY-T1-E3Pbfree Code: ObsoleteIhs Manufacturer: VISHAY SILICONIXPart Package Code: SOTPackage Description: SMALL OUTLINE, R-PDSO-G8Pin Count: 8ECCN Code: EAR99Manufacturer: Vishay SiliconixRisk Rank: 5.8Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 12 VDrain Current-Max (Abs) (ID): 7.5 ADrain Current-Max (ID): 7.5 ADrain-source On Resistance-Max: 0.023 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-G8JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: P-CHANNELPower Dissipation-Max (Abs): 2 WPulsed Drain Current-Max (IDM): 30 AQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime Trans MOSFET P-CH 12V 7.5A 8-Pin SOIC N T/R