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Vishay Siliconix SI4973DY-T1-GE3 IGBT Module

SI4973DY-T1-GE3

#Vishay Siliconix, #SI4973DY_T1_GE3, #IGBT_Module, #IGBT, SI4973DY-T1-GE3 TRANSISTOR 5800 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIAN

· Categories: IGBT Module
· Manufacturer: Vishay Siliconix
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 2222
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SI4973DY-T1-GE3 Specification

Sell SI4973DY-T1-GE3, #Vishay Siliconix #SI4973DY-T1-GE3 Stock, SI4973DY-T1-GE3 TRANSISTOR 5800 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal; SI4973DY-T1-GE3, #IGBT_Module, #IGBT, #SI4973DY_T1_GE3
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Manufacturer Part Number: SI4973DY-T1-GE3Pbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: VISHAY SILICONIXPart Package Code: SOTPackage Description: SMALL OUTLINE, R-PDSO-G8Pin Count: 8ECCN Code: EAR99Manufacturer: Vishay SiliconixRisk Rank: 5.81Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (Abs) (ID): 5.8 ADrain Current-Max (ID): 5.8 ADrain-source On Resistance-Max: 0.023 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-G8JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: P-CHANNELPower Dissipation-Max (Abs): 2 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: PURE MATTE TINTerminal Form: GULL WINGTerminal Position: DUALTime TRANSISTOR 5800 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal

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