Vishay Siliconix SI5519DU-T1-GE3 IGBT Module

Manufacturer Part Number: SI5519DU-T1-GE3Part Life Cycle Code: ObsoleteIhs Manufacturer: VISHAY SILICONIXPackage Description: SMALL OUTLINE, R-PDSO-C6Pin Count: 8ECCN Code: EAR99Manufacturer: Vishay SiliconixRisk Rank: 5.83Case Connection: DRAINConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 20 VDrain Current-Max (ID): 6 ADrain-source On Resistance-Max: 0.036 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-C6Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPolarity/Channel Type: N-CHANNEL AND P-CHANNELPulsed Drain Current-Max (IDM): 25 AQualification Status: Not QualifiedSurface Mount: YESTerminal Form: C BENDTerminal Position: DUALTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Field-Effect Transistor, 6A I(D), 20V, 0.036ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, CHIPFET-8