Vishay Siliconix SI5943DU-T1-GE3 IGBT Module

Manufacturer Part Number: SI5943DU-T1-GE3Rohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: VISHAY SILICONIXPackage Description: SMALL OUTLINE, R-XDSO-N6Pin Count: 8ECCN Code: EAR99Manufacturer: Vishay SiliconixRisk Rank: 5.84Case Connection: DRAINConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 12 VDrain Current-Max (ID): 5 ADrain-source On Resistance-Max: 0.064 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-XDSO-N6JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: P-CHANNELPulsed Drain Current-Max (IDM): 20 AQualification Status: Not QualifiedSurface Mount: YESTerminal Finish: MATTE TINTerminal Form: NO LEADTerminal Position: DUALTime Power Field-Effect Transistor, 5A I(D), 12V, 0.064ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, CHIPFET-8