Content last revised on December 9, 2023
Manufacturer Part Number: SI5997DU-T1-GE3Part Life Cycle Code: ObsoleteIhs Manufacturer: VISHAY SILICONIXPackage Description: SMALL OUTLINE, R-PDSO-C6Pin Count: 8ECCN Code: EAR99Manufacturer: Vishay SiliconixRisk Rank: 5.81Case Connection: DRAINConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (Abs) (ID): 6 ADrain Current-Max (ID): 6 ADrain-source On Resistance-Max: 0.054 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-C6Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: P-CHANNELPower Dissipation-Max (Abs): 10.4 WPulsed Drain Current-Max (IDM): 25 AQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Form: C BENDTerminal Position: DUALTime DUAL P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel