SI6925ADQ-T1-E3 features:
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Drain-Source Voltage VDS 20V
Gate-Source Voltage VGS ± 12V
Pulsed Drain Current (10 μs Pulse Width) IDM 30A
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150°C
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 0.6~1.8V
Gate-Body Leakage IGSS VDS = 0V, VGS = ± 12V ± 100nA
On-State Drain Currentb ID(on) 10A
Forward Transconductance gfs VDS = 10 V, ID = 3.9 A 14S
Diode Forward Voltage VSD IS = 1.0 A, VGS = 0 V 0.75~1.1V
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