#Vishay Siliconix, #SI7270DP_T1_GE3, #IGBT_Module, #IGBT, SI7270DP-T1-GE3 Si7270DP Dual N-Channel 30 V (D-S) MOSFET; SI7270DP-T1-GE3
Manufacturer Part Number: SI7270DP-T1-GE3Part Life Cycle Code: ObsoleteIhs Manufacturer: VISHAY SILICONIXPart Package Code: SOTPackage Description: SMALL OUTLINE, R-PDSO-C6Pin Count: 8ECCN Code: EAR99Manufacturer: Vishay SiliconixRisk Rank: 5.82Avalanche Energy Rating (Eas): 11.2 mJCase Connection: DRAINConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (Abs) (ID): 8 ADrain Current-Max (ID): 8 ADrain-source On Resistance-Max: 0.021 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-C6JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 17.8 WPulsed Drain Current-Max (IDM): 35 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: C BENDTerminal Position: DUALTime Si7270DP Dual N-Channel 30 V (D-S) MOSFET