#Vishay Siliconix, #SI7925DN_T1_E3, #IGBT_Module, #IGBT, SI7925DN-T1-E3 Power Field-Effect Transistor, 4.8A I(D), 12V, 0.042ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semic
Manufacturer Part Number: SI7925DN-T1-E3Rohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: VISHAY SILICONIXPackage Description: SMALL OUTLINE, S-XDSO-C6Pin Count: 8ECCN Code: EAR99Manufacturer: Vishay SiliconixRisk Rank: 5.84Case Connection: DRAINConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 12 VDrain Current-Max (ID): 4.8 ADrain-source On Resistance-Max: 0.042 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: S-XDSO-C6JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEPackage Body Material: UNSPECIFIEDPackage Shape: SQUAREPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: P-CHANNELPulsed Drain Current-Max (IDM): 20 AQualification Status: Not QualifiedSurface Mount: YESTerminal Finish: MATTE TINTerminal Form: C BENDTerminal Position: DUALTime Power Field-Effect Transistor, 4.8A I(D), 12V, 0.042ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, 1212-8, POWERPAK-8