Vishay Siliconix SIA778DJ-T1-GE3 IGBT Module

Manufacturer Part Number: SIA778DJ-T1-GE3Pbfree Code: ObsoleteIhs Manufacturer: VISHAY SILICONIXPart Package Code: SC-70Package Description: SMALL OUTLINE, R-XDSO-N6Pin Count: 6ECCN Code: EAR99Manufacturer: Vishay SiliconixRisk Rank: 7.88Case Connection: DRAINConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 12 VDrain Current-Max (Abs) (ID): 4.5 ADrain Current-Max (ID): 4.5 ADrain-source On Resistance-Max: 0.029 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-XDSO-N6Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 6.5 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowersSurface Mount: YESTerminal Form: NO LEADTerminal Position: DUALTime N-CHANNEL 12-V & 20-V (D-S) MOSFET - Tape and Reel