#Vishay Siliconix, #SIA914DJ_T1_E3, #IGBT_Module, #IGBT, SIA914DJ-T1-E3 Power Field-Effect Transistor, 4.5A I(D), 20V, 0.053ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semic
Manufacturer Part Number: SIA914DJ-T1-E3Rohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: VISHAY SILICONIXPart Package Code: SC-70Package Description: SMALL OUTLINE, S-PDSO-C6Pin Count: 6ECCN Code: EAR99Manufacturer: Vishay SiliconixRisk Rank: 5.82Case Connection: DRAINConfiguration: SEPARATE, 2 ELEMENTSDS Breakdown Voltage-Min: 20 VDrain Current-Max (ID): 4.5 ADrain-source On Resistance-Max: 0.053 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: S-PDSO-C6JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: SQUAREPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 20 AQualification Status: Not QualifiedSurface Mount: YESTerminal Finish: MATTE TINTerminal Form: C BENDTerminal Position: DUALTime Power Field-Effect Transistor, 4.5A I(D), 20V, 0.053ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SC-70, POWERPAK, 6 PIN