#Vishay Siliconix, #SIE832DF_T1_E3, #IGBT_Module, #IGBT, SIE832DF-T1-E3 Trans MOSFET N-CH 40V 23.6A 10-Pin PolarPAK T/R; SIE832DF-T1-E3
Manufacturer Part Number: SIE832DF-T1-E3Pbfree Code: ObsoleteIhs Manufacturer: VISHAY SILICONIXPackage Description: SMALL OUTLINE, R-PDSO-N4Pin Count: 10ECCN Code: EAR99Manufacturer: Vishay SiliconixRisk Rank: 5.81Avalanche Energy Rating (Eas): 61 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 40 VDrain Current-Max (Abs) (ID): 103 ADrain Current-Max (ID): 23.6 ADrain-source On Resistance-Max: 0.0055 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-N4JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 104 WPulsed Drain Current-Max (IDM): 80 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: NO LEADTerminal Position: DUALTime Trans MOSFET N-CH 40V 23.6A 10-Pin PolarPAK T/R