Features
. Dual driver for halfbridge IGBT Modules
.For 1700 V-IGBT
.5 V input level
.CMOS compatible inputs
.Short Circuit protection by VCE monitoning and swich off
.Drive interlock top/bottom
.Isolation by transformers
.Supply undervoltage protaction(13V)
.Error latch/output
Typical Applications
.Driver for IGBT and MOSFET Modules in bridge Circuits,drives, UPS and wilding inverters
.DS bus viotage up to 1200V
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:400A
Collector current Icp:800A
Collector power dissipation Pc:1270W
Collector-Emitter voltage VCES:1700V
Operating junction temperature Tj:-25 to +85°C
Storage temperature Tstg :-40 to +85°C
Mounting screw torque 3.5 *1 N·m
Weight 115g
