#SIEMENS, #SKM254F, #IGBT_Module, #IGBT, SKM254F Power Field-Effect Transistor, 35A I(D), 500V, 0.17ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor
Manufacturer Part Number: SKM254FPart Life Cycle Code: ObsoleteIhs Manufacturer: Semikron INTERNATIONALPackage Description: FLANGE MOUNT, R-XUFM-X7Pin Count: 7Manufacturer: SEMIKRONRisk Rank: 5.83Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDConfiguration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 500 VDrain Current-Max (Abs) (ID): 35 ADrain Current-Max (ID): 35 ADrain-source On Resistance-Max: 0.17 ΩFET Technology: METAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss): 700 pFJESD-30 Code: R-XUFM-X7Number of Elements: 2Number of Terminals: 7Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation Ambient-Max: 400 WPower Dissipation-Max (Abs): 400 WPulsed Drain Current-Max (IDM): 140 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Field-Effect Transistor, 35A I(D), 500V, 0.17ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SEMITRANS-7