#SEMIKRON, #SKT290F10DS, #IGBT_Module, #IGBT, SKT290F10DS Silicon Controlled Rectifier, 600A I(T)RMS, 290000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB;
Manufacturer Part Number: SKT290F10DS
Ihs Manufacturer: Semikron INTERNATIONAL
Package Description: DISK BUTTON, O-CEDB-N2
Manufacturer: SEMIKRON
Additional Feature: FAST
Circuit Commutated Turn-off Time-Nom: 15 µs
Configuration: SINGLE
Critical Rate of Rise of Off-State Voltage-Min: 500 V/us
DC Gate Trigger Current-Max: 250 mA
DC Gate Trigger Voltage-Max: 4 V
Holding Current-Max: 400 mA
JEDEC-95 Code: TO-200AB
JESD-30 Code: O-CEDB-N2
Leakage Current-Max: 70 mA
Non-Repetitive Pk On-state Cur: 5000 A
Number of Elements: 1
Number of Terminals: 2
On-state Current-Max: 290000 A
Operating Temperature-Max: 125 °C
Operating Temperature-Min: -40 °C
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Package Shape: ROUND
Package Style: DISK BUTTON
RMS On-state Current-Max: 600 A
Repetitive Peak Off-state Leakage Current-Max: 70000 µA
Repetitive Peak Off-state Voltage: 1000 V
Repetitive Peak Reverse Voltage: 1000 V
Subcategory: Silicon Controlled Rectifiers
Surface Mount: YES
Terminal Form: NO LEAD
Terminal Position: END
Trigger Device Type: SCR
Silicon Controlled Rectifier, 600A I(T)RMS, 290000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB