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SEMIKRON SKT290F10DS New IGBT Module

#SEMIKRON, #SKT290F10DS, #IGBT_Module, #IGBT, SKT290F10DS Silicon Controlled Rectifier, 600A I(T)RMS, 290000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB;

· Categories: IGBT Module
· Manufacturer: SEMIKRON
· Price: US$
· Date Code: 11+
. Available Qty: 22
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SKT290F10DS Specification

Sell SKT290F10DS, #SEMIKRON #SKT290F10DS New Stock, SKT290F10DS Silicon Controlled Rectifier, 600A I(T)RMS, 290000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB; SKT290F10DS, #IGBT_Module, #IGBT, #SKT290F10DS
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/skt290f10ds.html

Manufacturer Part Number: SKT290F10DS

Ihs Manufacturer: Semikron INTERNATIONAL

Package Description: DISK BUTTON, O-CEDB-N2

Manufacturer: SEMIKRON

Additional Feature: FAST

Circuit Commutated Turn-off Time-Nom: 15 µs

Configuration: SINGLE

Critical Rate of Rise of Off-State Voltage-Min: 500 V/us

DC Gate Trigger Current-Max: 250 mA

DC Gate Trigger Voltage-Max: 4 V

Holding Current-Max: 400 mA

JEDEC-95 Code: TO-200AB

JESD-30 Code: O-CEDB-N2

Leakage Current-Max: 70 mA

Non-Repetitive Pk On-state Cur: 5000 A

Number of Elements: 1

Number of Terminals: 2

On-state Current-Max: 290000 A

Operating Temperature-Max: 125 °C

Operating Temperature-Min: -40 °C

Package Body Material: CERAMIC, METAL-SEALED COFIRED

Package Shape: ROUND

Package Style: DISK BUTTON

RMS On-state Current-Max: 600 A

Repetitive Peak Off-state Leakage Current-Max: 70000 µA

Repetitive Peak Off-state Voltage: 1000 V

Repetitive Peak Reverse Voltage: 1000 V

Subcategory: Silicon Controlled Rectifiers

Surface Mount: YES

Terminal Form: NO LEAD

Terminal Position: END

Trigger Device Type: SCR

Silicon Controlled Rectifier, 600A I(T)RMS, 290000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB

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