#SEMIKRON, #SKT351F14DV, #IGBT_Module, #IGBT, SKT351F14DV Silicon Controlled Rectifier, 900A I(T)RMS, 350000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, TO-200AB;
Manufacturer Part Number: SKT351F14DVPart Life Cycle Code: ObsoleteIhs Manufacturer: Semikron INTERNATIONALPackage Description: DISK BUTTON, O-CEDB-N2HTS Code: 8541.30.00.80Manufacturer: SEMIKRONRisk Rank: 5.82Additional Feature: FASTCircuit Commutated Turn-off Time-Nom: 30 µsConfiguration: SINGLECritical Rate of Rise of Off-State Voltage-Min: 500 V/usDC Gate Trigger Current-Max: 250 mADC Gate Trigger Voltage-Max: 4 VHolding Current-Max: 400 mAJEDEC-95 Code: TO-200ABJESD-30 Code: O-CEDB-N2Leakage Current-Max: 80 mANon-Repetitive Pk On-state Cur: 6500 ANumber of Elements: 1Number of Terminals: 2On-state Current-Max: 350000 AOperating Temperature-Max: 125 °COperating Temperature-Min: -40 °CPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: ROUNDPackage Style: DISK BUTTONQualification Status: Not QualifiedRMS On-state Current-Max: 900 ARepetitive Peak Off-state Leakage Current-Max: 80000 µARepetitive Peak Off-state Voltage: 1400 VRepetitive Peak Reverse Voltage: 1400 VSubcategory: Silicon Controlled RectifiersSurface Mount: YESTerminal Form: NO LEADTerminal Position: ENDTrigger Device Type: SCR Silicon Controlled Rectifier, 900A I(T)RMS, 350000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, TO-200AB