#Sanken, #SLA5061, #IGBT_Module, #IGBT, SLA5061 Power Field-Effect Transistor, 10A I(D), 60V, 0.14ohm, 6-Element, N-Channel and P-Channel, Silicon, Metal-oxide
Manufacturer Part Number: SLA5061Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: SANKEN ELECTRIC CO LTDPackage Description: FLANGE MOUNT, R-PSFM-T12Pin Count: 12ECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: Sanken Electric Co LtdRisk Rank: 2.23Case Connection: ISOLATEDConfiguration: COMPLEXDS Breakdown Voltage-Min: 60 VDrain Current-Max (ID): 10 ADrain-source On Resistance-Max: 0.14 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PSFM-T12Number of Elements: 6Number of Terminals: 12Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNEL AND P-CHANNELPulsed Drain Current-Max (IDM): 15 AQualification Status: Not QualifiedSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Power Field-Effect Transistor, 10A I(D), 60V, 0.14ohm, 6-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SLA, SIP-12