#Sanken, #SMA5112, #IGBT_Module, #IGBT, SMA5112 Power Field-Effect Transistor, 7A I(D), 250V, 0.5ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor F
Manufacturer Part Number: SMA5112Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: SANKEN ELECTRIC CO LTDPackage Description: IN-LINE, R-PSIP-T12Pin Count: 12ECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: Sanken Electric Co LtdRisk Rank: 2.26Avalanche Energy Rating (Eas): 55 mJConfiguration: COMPLEXDS Breakdown Voltage-Min: 250 VDrain Current-Max (ID): 7 ADrain-source On Resistance-Max: 0.5 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PSIP-T12Number of Elements: 6Number of Terminals: 12Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: IN-LINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 15 AQualification Status: Not QualifiedSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Power Field-Effect Transistor, 7A I(D), 250V, 0.5ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMA, SIP-12