#Vishay Siliconix, #SQJ940EP_T1_GE3, #IGBT_Module, #IGBT, SQJ940EP-T1-GE3 POWER, FET; SQJ940EP-T1-GE3
Manufacturer Part Number: SQJ940EP-T1-GE3Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: VISHAY INTERTECHNOLOGY INCPackage Description: SMALL OUTLINE, R-PSSO-G4ECCN Code: EAR99Manufacturer: Vishay IntertechnologiesRisk Rank: 2.28Avalanche Energy Rating (Eas): 21 mJCase Connection: DRAINConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 40 VDrain Current-Max (ID): 15 ADrain-source On Resistance-Max: 0.016 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PSSO-G4Number of Elements: 2Number of Terminals: 4Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 60 ASurface Mount: YESTerminal Form: GULL WINGTerminal Position: SINGLETransistor Element Material: SILICON POWER, FET