#Vishay Siliconix, #SST5485_E3, #IGBT_Module, #IGBT, SST5485-E3 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction F
Manufacturer Part Number: SST5485-E3Pbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: VISHAY INTERTECHNOLOGY INCPart Package Code: SOT-23Package Description: SMALL OUTLINE, R-PDSO-G3Pin Count: 3HTS Code: 8541.21.00.75Manufacturer: Vishay IntertechnologiesRisk Rank: 7.53Additional Feature: LOW NOISEConfiguration: SINGLEFET Technology: JUNCTIONHighest Frequency Band: ULTRA HIGH FREQUENCY BANDJEDEC-95 Code: TO-236ABJESD-30 Code: R-PDSO-G3JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Mode: DEPLETION MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 0.35 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-236AB, TO-236, 3 PIN