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Vishay Semiconductor Diodes Division ST1230C12K0 IGBT Module

#Vishay Semiconductor Diodes Division, #ST1230C12K0, #IGBT_Module, #IGBT, ST1230C12K0 Silicon Controlled Rectifier, 1700000mA I(T), 1200V V(DRM), PACKAGE-3; ST1230C12K0

· Categories: IGBT Module
· Manufacturer: Vishay Semiconductor Diodes Division
· Price: US$
· Date Code: Contains lead / RoHS non-compliant
. Available Qty: 1915
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ST1230C12K0 Specification

Sell ST1230C12K0, #Vishay Semiconductor Diodes Division #ST1230C12K0 Stock, ST1230C12K0 Silicon Controlled Rectifier, 1700000mA I(T), 1200V V(DRM), PACKAGE-3; ST1230C12K0, #IGBT_Module, #IGBT, #ST1230C12K0
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/st1230c12k0.html

Manufacturer Part Number: ST1230C12K0Pbfree Code: NoPart Life Cycle Code: ActiveIhs Manufacturer: VISHAY INTERTECHNOLOGY INCPackage Description: DISK BUTTON, O-CXDB-X3Pin Count: 3ECCN Code: EAR99HTS Code: 8541.30.00.80Manufacturer: Vishay IntertechnologiesRisk Rank: 5.06Circuit Commutated Turn-off Time-Nom: 200 µsDC Gate Trigger Current-Max: 200 mADC Gate Trigger Voltage-Max: 3 VHolding Current-Max: 600 mAJESD-30 Code: O-CXDB-X3Leakage Current-Max: 100 mANon-Repetitive Pk On-state Cur: 34000 ANumber of Terminals: 3On-state Current-Max: 1700000 AOperating Temperature-Max: 125 °COperating Temperature-Min: -40 °CPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: ROUNDPackage Style: DISK BUTTONPeak Reflow Temperature (Cel): NOT SPECIFIEDQualification Status: Not QualifiedRepetitive Peak Off-state Voltage: 1200 VSubcategory: Silicon Controlled RectifiersSurface Mount: YESTerminal Form: UNSPECIFIEDTerminal Position: UNSPECIFIEDTime Silicon Controlled Rectifier, 1700000mA I(T), 1200V V(DRM), PACKAGE-3

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