#Vishay Semiconductor Diodes Division, #ST1230C12K0, #IGBT_Module, #IGBT, ST1230C12K0 Silicon Controlled Rectifier, 1700000mA I(T), 1200V V(DRM), PACKAGE-3; ST1230C12K0
Manufacturer Part Number: ST1230C12K0Pbfree Code: NoPart Life Cycle Code: ActiveIhs Manufacturer: VISHAY INTERTECHNOLOGY INCPackage Description: DISK BUTTON, O-CXDB-X3Pin Count: 3ECCN Code: EAR99HTS Code: 8541.30.00.80Manufacturer: Vishay IntertechnologiesRisk Rank: 5.06Circuit Commutated Turn-off Time-Nom: 200 µsDC Gate Trigger Current-Max: 200 mADC Gate Trigger Voltage-Max: 3 VHolding Current-Max: 600 mAJESD-30 Code: O-CXDB-X3Leakage Current-Max: 100 mANon-Repetitive Pk On-state Cur: 34000 ANumber of Terminals: 3On-state Current-Max: 1700000 AOperating Temperature-Max: 125 °COperating Temperature-Min: -40 °CPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: ROUNDPackage Style: DISK BUTTONPeak Reflow Temperature (Cel): NOT SPECIFIEDQualification Status: Not QualifiedRepetitive Peak Off-state Voltage: 1200 VSubcategory: Silicon Controlled RectifiersSurface Mount: YESTerminal Form: UNSPECIFIEDTerminal Position: UNSPECIFIEDTime Silicon Controlled Rectifier, 1700000mA I(T), 1200V V(DRM), PACKAGE-3