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Vishay Semiconductor Diodes Division ST183S08PFL0 New IGBT Module

#Vishay Semiconductor Diodes Division, #ST183S08PFL0, #IGBT_Module, #IGBT, ST183S08PFL0 Silicon Controlled Rectifier, 306A I(T)RMS, 195000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-209AB, T

· Categories: IGBT Module
· Manufacturer: Vishay Semiconductor Diodes Division
· Price: US$
· Date Code: Contains lead / RoHS non-compliant
. Available Qty: 1626
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ST183S08PFL0 Specification

Sell ST183S08PFL0, #Vishay Semiconductor Diodes Division #ST183S08PFL0 New Stock, ST183S08PFL0 Silicon Controlled Rectifier, 306A I(T)RMS, 195000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-209AB, TO-93, 3 PIN; ST183S08PFL0, #IGBT_Module, #IGBT, #ST183S08PFL0
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/st183s08pfl0.html

Manufacturer Part Number: ST183S08PFL0Pbfree Code: NoPart Life Cycle Code: ActiveIhs Manufacturer: VISHAY INTERTECHNOLOGY INCPart Package Code: TO-93Package Description: TO-93, 3 PINPin Count: 3HTS Code: 8541.30.00.80Manufacturer: Vishay IntertechnologiesRisk Rank: 5.17Additional Feature: HIGH SPEEDCircuit Commutated Turn-off Time-Nom: 15 µsConfiguration: SINGLEDC Gate Trigger Current-Max: 200 mADC Gate Trigger Voltage-Max: 3 VHolding Current-Max: 600 mAJEDEC-95 Code: TO-209ABJESD-30 Code: O-XUPM-H3Leakage Current-Max: 40 mAMoisture Sensitivity Level: 1Non-Repetitive Pk On-state Cur: 4900 ANumber of Elements: 1Number of Terminals: 3On-state Current-Max: 195000 AOperating Temperature-Max: 125 °COperating Temperature-Min: -40 °CPackage Body Material: UNSPECIFIEDPackage Shape: ROUNDPackage Style: POST/STUD MOUNTPeak Reflow Temperature (Cel): 225Qualification Status: Not QualifiedRMS On-state Current-Max: 306 ARepetitive Peak Off-state Voltage: 800 VRepetitive Peak Reverse Voltage: 800 VSubcategory: Silicon Controlled RectifiersSurface Mount: NOTerminal Form: HIGH CURRENT CABLETerminal Position: UPPERTime Silicon Controlled Rectifier, 306A I(T)RMS, 195000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-209AB, TO-93, 3 PIN

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