Content last revised on May 18, 2023
Manufacturer Part Number: STB25NM60NDBrand Name: STMicroelectronicsRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: STMICROELECTRONICSPart Package Code: D2PAKPackage Description: SMALL OUTLINE, R-PSSO-G2Pin Count: 4ECCN Code: EAR99Manufacturer: STMicroelectronicsRisk Rank: 5.79Avalanche Energy Rating (Eas): 850 mJConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 600 VDrain Current-Max (Abs) (ID): 21 ADrain Current-Max (ID): 21 ADrain-source On Resistance-Max: 0.16 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: TO-263ABJESD-30 Code: R-PSSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 2Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 245Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 160 WPulsed Drain Current-Max (IDM): 84 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: GULL WINGTerminal Position: SINGLETime N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package