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STMicroelectronics STL21N65M5

  • STL21N65M5
  • STL21N65M5 N-channel 650 V, 0.175 Ohm typ., 2.7 A MDmesh M5 power MOSFET in a PowerFLAT 8x8 HV package; STL21N65M5

    · Categories: IGBT
    · Manufacturer: STMicroelectronics
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 60565916
    MOQ: 1 PC
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    Content last revised on May 20, 2023

    Manufacturer Part Number: STL21N65M5Brand Name: STMicroelectronicsPart Life Cycle Code: Not RecommendedIhs Manufacturer: STMICROELECTRONICSPackage Description: SMALL OUTLINE, S-PDSO-N5Pin Count: 8ECCN Code: EAR99Manufacturer: STMicroelectronicsRisk Rank: 7.73Additional Feature: ULTRA-LOW RESISTANCEAvalanche Energy Rating (Eas): 400 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 650 VDrain Current-Max (Abs) (ID): 17 ADrain Current-Max (ID): 2.7 ADrain-source On Resistance-Max: 0.19 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: S-PDSO-N5JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 5Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: SQUAREPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 125 WPulsed Drain Current-Max (IDM): 10.8 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Matte Tin (Sn) - annealedTerminal Form: NO LEADTerminal Position: DUALTime N-channel 650 V, 0.175 Ohm typ., 2.7 A MDmesh M5 power MOSFET in a PowerFLAT 8x8 HV package