#STMicroelectronics, #STPSC10TH13TI, #IGBT_Module, #IGBT, STPSC10TH13TI 2 x 650V tandem, 10 A High Surge Silicon Carbide Power Schottky Diode; STPSC10TH13TI
Manufacturer Part Number: STPSC10TH13TIBrand Name: STMicroelectronicsPart Life Cycle Code: ActiveIhs Manufacturer: STMICROELECTRONICSPackage Description: R-PSFM-T3ECCN Code: EAR99Manufacturer: STMicroelectronicsRisk Rank: 1.49Application: POWERCase Connection: ISOLATEDConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTSDiode Element Material: SILICON CARBIDEDiode Type: RECTIFIER DIODEForward Voltage-Max (VF): 1.75 VJEDEC-95 Code: TO-220ABJESD-30 Code: R-PSFM-T3Non-rep Pk Forward Current-Max: 80 ANumber of Elements: 2Number of Phases: 1Number of Terminals: 3Operating Temperature-Max: 175 °COperating Temperature-Min: -40 °COutput Current-Max: 10 APackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDRep Pk Reverse Voltage-Max: 650 VReverse Current-Max: 100 µASurface Mount: NOTechnology: SCHOTTKYTerminal Form: THROUGH-HOLETerminal Position: SINGLETime 2 x 650V tandem, 10 A High Surge Silicon Carbide Power Schottky Diode