Power MBN1200E33D IGBT Module

Features

• • Plug-and-play solution

• • Allows parallel connection of IGBT modules

• • For 2-level, 3-level and multilevel topologies

• • Built-in isolated DC/DC power supply (master)

• • F iber -optic links (master)

• • Built-in interface to 1SP0635D2S1(C) (slave)

• • Duty cycle 0....100%

• • Dynamic Advanced Active Clamping DA2C

• • Dynamic IGBT short-circuit protection

• • Monitoring of supply voltage

• • Monitoring of gate voltage

• • Extremely reliable; long service life

• • Shortens application development time

• • Suitable for MBN2400E17D

Supply voltage VDC 16V

Average supply current IDC 400mA

Average supply current IDC 1130MA

Gate output power 3W

Gate output power 2.6W

Switching frequency f 10kHz

Switching frequency f 8.6kHz

Gate peak current Iout -35~35A

Test voltage (50Hz/ lmin.) 6000 VAC

DC-link voltage 2200V

Operating voltage 2700V

Max. emitter-emitter voltage 200 Vpeak

Max. interface current 4Ams

Operating temperature -40~85 °C

Storage temperature -40~50 °C

Surface temperature 125 °C