Content last revised on August 24, 2023
Manufacturer Part Number: STS10DN3LH5Brand Name: STMicroelectronicsPart Life Cycle Code: Not RecommendedIhs Manufacturer: STMICROELECTRONICSPart Package Code: SOTPackage Description: SMALL OUTLINE, R-PDSO-G8Pin Count: 8ECCN Code: EAR99Manufacturer: STMicroelectronicsRisk Rank: 7.71Avalanche Energy Rating (Eas): 50 mJConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (Abs) (ID): 10 ADrain Current-Max (ID): 10 ADrain-source On Resistance-Max: 0.028 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-G8JESD-609 Code: e4Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 2.5 WPulsed Drain Current-Max (IDM): 40 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)Terminal Form: GULL WINGTerminal Position: DUALTime Dual N-channel 30 V, 0.019 Ohm;, 10 A, SO-8 STripFET (TM); V Power MOSFET