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T4771N29TOF New IGBT Module

#, #T4771N29TOF, #IGBT_Module, #IGBT, T4771N29TOF Silicon Controlled Rectifier, 4770000mA I(T), 2900V V(DRM); T4771N29TOF

· Categories: IGBT Module
· Manufacturer:
· Price: US$
· Date Code: 11+
. Available Qty: 214
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T4771N29TOF Specification

Sell T4771N29TOF, # #T4771N29TOF New Stock, T4771N29TOF Silicon Controlled Rectifier, 4770000mA I(T), 2900V V(DRM); T4771N29TOF, #IGBT_Module, #IGBT, #T4771N29TOF
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/t4771n29tof.html

Manufacturer Part Number: T4771N29TOFPart Life Cycle Code: ActiveIhs Manufacturer: Infineon TECHNOLOGIES AGManufacturer: Infineon Technologies AGRisk Rank: 5.74Circuit Commutated Turn-off Time-Nom: 250 µsCritical Rate of Rise of Off-State Voltage-Min: 1000 V/usDC Gate Trigger Current-Max: 350 mADC Gate Trigger Voltage-Max: 2.5 VHolding Current-Max: 350 mALeakage Current-Max: 200 mANon-Repetitive Pk On-state Cur: 95000 AOn-State Voltage-Max: 1.14 VOn-state Current-Max: 4770000 AOperating Temperature-Max: 125 °COperating Temperature-Min: -40 °CRepetitive Peak Off-state Voltage: 2900 VSubcategory: Silicon Controlled RectifiersTrigger Device Type: SCR Silicon Controlled Rectifier, 4770000mA I(T), 2900V V(DRM)

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