#Powerex Inc, #T7S0186504DN, #IGBT_Module, #IGBT, T7S0186504DN Silicon Controlled Rectifier, 1270A I(T)RMS, 650000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element; T7S01865
Manufacturer Part Number: T7S0186504DNPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Powerex INCPackage Description: DISK BUTTON, O-CXDB-X4HTS Code: 8541.30.00.80Manufacturer: Powerex Power SemiconductorsRisk Rank: 5.68Circuit Commutated Turn-off Time-Nom: 150 µsConfiguration: SINGLECritical Rate of Rise of Off-State Voltage-Min: 300 V/usDC Gate Trigger Current-Max: 150 mADC Gate Trigger Voltage-Max: 3 VJESD-30 Code: O-CXDB-X4Leakage Current-Max: 30 mANon-Repetitive Pk On-state Cur: 9000 ANumber of Elements: 1Number of Terminals: 4On-state Current-Max: 650000 AOperating Temperature-Max: 125 °COperating Temperature-Min: -40 °CPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: ROUNDPackage Style: DISK BUTTONPeak Reflow Temperature (Cel): NOT SPECIFIEDQualification Status: Not QualifiedRMS On-state Current-Max: 1270 ARepetitive Peak Off-state Voltage: 1800 VRepetitive Peak Reverse Voltage: 1800 VSubcategory: Silicon Controlled RectifiersSurface Mount: YESTerminal Form: UNSPECIFIEDTerminal Position: UNSPECIFIEDTime Silicon Controlled Rectifier, 1270A I(T)RMS, 650000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element