Powerex Inc TA20081803DH IGBT Module

Manufacturer Part Number: TA20081803DHPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Powerex INCPackage Description: HERMETIC SEALED, TA2, 2 PINPin Count: 2HTS Code: 8541.30.00.80Manufacturer: Powerex Power SemiconductorsRisk Rank: 5.2Circuit Commutated Turn-off Time-Nom: 250 µsConfiguration: SINGLECritical Rate of Rise of Off-State Voltage-Min: 300 V/usDC Gate Trigger Current-Max: 200 mADC Gate Trigger Voltage-Max: 3 VJESD-30 Code: O-CEDB-N2Leakage Current-Max: 100 mANon-Repetitive Pk On-state Cur: 40000 ANumber of Elements: 1Number of Terminals: 2On-state Current-Max: 1800000 AOperating Temperature-Max: 125 °COperating Temperature-Min: -40 °CPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: ROUNDPackage Style: DISK BUTTONPeak Reflow Temperature (Cel): NOT SPECIFIEDQualification Status: Not QualifiedRMS On-state Current-Max: 2820 ARepetitive Peak Off-state Voltage: 800 VRepetitive Peak Reverse Voltage: 800 VSubcategory: Silicon Controlled RectifiersSurface Mount: YESTerminal Form: NO LEADTerminal Position: ENDTime Silicon Controlled Rectifier, 2820A I(T)RMS, 1800000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, HERMETIC SEALED, TA2, 2 PIN