TIM1200DDM17-TSA000 | High-Power 1700V Dual IGBT for Demanding Industrial Inverters
The TIM1200DDM17-TSA000 is a high-performance dual IGBT module engineered to meet the stringent demands of high-voltage, high-current power conversion systems. With a robust 1700V blocking voltage and a 1200A continuous collector current rating, this module provides the power handling capability and reliability required for next-generation industrial applications, ensuring stable operation under the most challenging electrical and thermal conditions.
Product Highlights at a Glance
- High Voltage & Current Ratings: 1700V VCES and 1200A IC provide substantial design margin for multi-megawatt systems.
- Low Conduction Losses: Optimized with advanced trench-gate and field-stop technology to achieve an exceptionally low VCE(sat) , directly translating to higher inverter efficiency and reduced cooling requirements.
- Superior Thermal Performance: Features an AlSiC baseplate with low thermal resistance, ensuring efficient heat extraction and enhancing power cycling capability for long-term reliability.
- Robust and Reliable: Engineered for a wide Safe Operating Area (SOA) and high short-circuit withstand time, safeguarding the module against fault conditions in the field.
Technical Deep Dive: The Engineering Inside
The performance of the TIM1200DDM17-TSA000 is rooted in its sophisticated silicon and package design. The module incorporates a 4th-generation Trench Field-Stop IGBT structure, which significantly reduces the trade-off between on-state voltage (VCE(sat)) and turn-off losses (Eoff). This means engineers no longer have to sacrifice as much efficiency at higher switching frequencies. For the system designer, this allows for the use of smaller, lighter magnetic components without incurring a severe thermal penalty.
Paired with the IGBT is a soft-recovery Free-Wheeling Diode (FWD). The diode's controlled recovery characteristic minimizes voltage overshoot and electromagnetic interference (EMI) during turn-off. This is a critical advantage in high-power systems where mitigating EMI can be a major design challenge, simplifying filter design and accelerating time-to-market. The module's internal layout is also optimized to minimize stray inductance, further reducing voltage overshoot and ensuring clean switching waveforms.
Application Scenarios & Value Proposition
This module is not a general-purpose component; it is a specialized solution for high-power applications where reliability is non-negotiable.
- Wind Turbine Converters: The 1700V rating is ideal for the DC link voltages found in multi-megawatt wind turbines. Its high thermal cycling capability withstands the fluctuating power generation inherent in wind, ensuring long service life in remote and hard-to-service nacelles.
- High-Power Industrial Motor Drives: In applications like mining excavators, rolling mills, and marine propulsion systems, the TIM1200DDM17-TSA000 provides the raw power and ruggedness needed for precise torque control of large AC motors, operating as a core component in the system's Variable Frequency Drive (VFD).
- Grid-Scale Energy Storage & UPS: For battery energy storage systems (BESS) and large-scale Uninterruptible Power Supplies (UPS), its high efficiency minimizes energy loss during charge/discharge cycles, while its robust SOA ensures the system can safely handle grid fault conditions.
Key Parameter Overview
The following table outlines the essential electrical and thermal characteristics for the TIM1200DDM17-TSA000. For comprehensive design data, please download the full datasheet.
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (VCES) | 1700 V |
| Continuous Collector Current (IC) @ Tc=80°C | 1200 A |
| Collector-Emitter Saturation Voltage (VCE(sat)) @ IC=1200A, Tj=125°C | 2.10 V (Typ.) |
| Maximum Junction Temperature (Tj,max) | 150 °C |
| Thermal Resistance, Junction-to-Case (Rth(j-c)) per IGBT | 0.018 K/W (Typ.) |
Frequently Asked Engineering Questions (FAQ)
1. Can the TIM1200DDM17-TSA000 modules be paralleled for higher current output?
Yes, these modules are designed with tight parameter distribution and a positive temperature coefficient for VCE(sat), which facilitates current sharing when paralleled. However, careful attention to symmetrical busbar layout is critical to minimize imbalances from stray inductance. We recommend consulting our application notes on IGBT paralleling for detailed guidance.
2. What are the recommended gate drive voltage levels for this module?
For optimal performance, a gate drive voltage of +15V for turn-on and -8V to -15V for turn-off is recommended. A negative gate voltage ensures a strong turn-off and improves noise immunity, which is crucial in high-power inverter environments. A robust gate driver with high peak current capability is essential for efficient switching.
For detailed design-in support or to discuss your specific application requirements, please contact our technical team for expert assistance.
