#ON Semiconductor, #TIP111G, #IGBT_Module, #IGBT, TIP111G Medium Power NPN Darlington Bipolar Power Transistor NPN , 2.0 A, 80 V, TO-220 3 LEAD STANDARD, 50-TUBE; TIP111G
Manufacturer Part Number: TIP111GBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPart Package Code: TO-220ABPackage Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3Manufacturer Package Code: 221A-09ECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: ON SemiconductorRisk Rank: 0.64Case Connection: COLLECTORCollector Current-Max (IC): 2 ACollector-Emitter Voltage-Max: 80 VConfiguration: DARLINGTON WITH BUILT-IN DIODE AND RESISTORDC Current Gain-Min (hFE): 500JEDEC-95 Code: TO-220ABJESD-30 Code: R-PSFM-T3JESD-609 Code: e3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): 260Polarity/Channel Type: NPNPower Dissipation-Max (Abs): 50 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: NOTerminal Finish: Tin (Sn)Terminal Form: THROUGH-HOLETerminal Position: SINGLETime Medium Power NPN Darlington Bipolar Power Transistor NPN , 2.0 A, 80 V, TO-220 3 LEAD STANDARD, 50-TUBE