#Rohm Semiconductor, #TT8J1TR, #IGBT_Module, #IGBT, TT8J1TR Power Field-Effect Transistor, 2.5A I(D), 12V, 0.061ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconducto
Manufacturer Part Number: TT8J1TRPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Rohm CO LTDPackage Description: SMALL OUTLINE, R-PDSO-F8Pin Count: 8ECCN Code: EAR99Manufacturer: ROHM SemiconductorRisk Rank: 5.82Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 12 VDrain Current-Max (Abs) (ID): 2.5 ADrain Current-Max (ID): 2.5 ADrain-source On Resistance-Max: 0.061 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-F8Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: P-CHANNELPower Dissipation-Max (Abs): 1.25 WPulsed Drain Current-Max (IDM): 10 AQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Form: FLATTerminal Position: DUALTime Power Field-Effect Transistor, 2.5A I(D), 12V, 0.061ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSST8, 8 PIN