#M/A-Com Technology Solutions, #UF28150J, #IGBT_Module, #IGBT, UF28150J RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semicon
Manufacturer Part Number: UF28150JPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: M/A-COM TECHNOLOGY SOLUTIONS INCPackage Description: FLANGE MOUNT, R-CDFM-F4Pin Count: 4ECCN Code: EAR99Manufacturer: MACOMRisk Rank: 1.49Case Connection: SOURCEConfiguration: COMMON SOURCE, 2 ELEMENTSDS Breakdown Voltage-Min: 65 VDrain Current-Max (ID): 16 AFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: ULTRA HIGH FREQUENCY BANDJESD-30 Code: R-CDFM-F4Number of Elements: 2Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 200 °CPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: YESTerminal Form: FLATTerminal Position: DUALTime RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4