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Renesas Electronics America UPA2791GR-E2-AT

  • UPA2791GR-E2-AT
  • UPA2791GR-E2-AT Power Field-Effect Transistor, 5A I(D), 30V, 0.05ohm, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8; UPA2791GR-E2-AT

    · Categories: IGBT
    · Manufacturer: Renesas Electronics America
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 1503
    MOQ: 1 PC
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    Content last revised on December 4, 2023

    Manufacturer Part Number: UPA2791GR-E2-ATPart Life Cycle Code: TransferredIhs Manufacturer: NEC ELECTRONICS AMERICA INCPackage Description: LEAD FREE, SOP-8Manufacturer: NEC Electronics America IncRisk Rank: 5.72Avalanche Energy Rating (Eas): 2.5 mJConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (ID): 5 ADrain-source On Resistance-Max: 0.05 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-G8JESD-609 Code: e3Number of Elements: 1Number of Terminals: 8Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPolarity/Channel Type: N-CHANNEL AND P-CHANNELPulsed Drain Current-Max (IDM): 20 AQualification Status: Not QualifiedSurface Mount: YESTerminal Finish: TINTerminal Form: GULL WINGTerminal Position: DUALTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Field-Effect Transistor, 5A I(D), 30V, 0.05ohm, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8

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