#IXYS, #VKM60_01P1, #IGBT_Module, #IGBT, VKM60-01P1 Power Field-Effect Transistor, 75A I(D), 100V, 0.025ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semicondu
Manufacturer Part Number: VKM60-01P1
Pbfree Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer: IXYS CORP
Package Description: FLANGE MOUNT, R-XUFM-X15
Pin Count: 15
ECCN Code: EAR99
Manufacturer: IXYS Corporation
Risk Rank: 5.74
Additional Feature: HIGH RELIABILITY
Case Connection: ISOLATED
Configuration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
DS Breakdown Voltage-Min: 100 V
Drain Current-Max (ID): 75 A
Drain-source On Resistance-Max: 0.025 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JESD-30 Code: R-XUFM-X15
Number of Elements: 4
Number of Terminals: 15
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Pulsed Drain Current-Max (IDM): 300 A
Qualification Status: Not Qualified
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Time
Power Field-Effect Transistor, 75A I(D), 100V, 0.025ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ECOPAC-15