#Vishay Siliconix, #VQ1006P_2, #IGBT_Module, #IGBT, VQ1006P-2 TRANSISTOR 0.4 A, 90 V, 3.5 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power; VQ1006P-2
Manufacturer Part Number: VQ1006P-2Pbfree Code: NoPart Life Cycle Code: Lifetime BuyIhs Manufacturer: VISHAY SILICONIXPackage Description: IN-LINE, R-PDIP-T14ECCN Code: EAR99HTS Code: 8541.29.00.75Manufacturer: Vishay SiliconixRisk Rank: 5.75Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 90 VDrain Current-Max (ID): 0.4 ADrain-source On Resistance-Max: 3.5 ΩFET Technology: METAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss): 10 pFJESD-30 Code: R-PDIP-T14JESD-609 Code: e0Number of Elements: 4Number of Terminals: 14Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: IN-LINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 2 AQualification Status: Not QualifiedSurface Mount: NOTerminal Finish: TIN LEADTerminal Form: THROUGH-HOLETerminal Position: DUALTime TRANSISTOR 0.4 A, 90 V, 3.5 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power