#Microsemi, #VRF151, #IGBT_Module, #IGBT, VRF151 RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconduc
Manufacturer Part Number: VRF151
Rohs Code: Yes
Part Life Cycle Code: Active
Package Description: FLANGE MOUNT, O-CRFM-F4
ECCN Code: EAR99
Manufacturer: Microsemi Corporation
Configuration: SINGLE
DS Breakdown Voltage-Min: 170 V
Drain Current-Max (ID): 16 A
FET Technology: METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band: VERY HIGH FREQUENCY BAND
JESD-30 Code: O-CRFM-F4
Number of Elements: 1
Number of Terminals: 4
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 200 °C
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Package Shape: ROUND
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Qualification Status: Not Qualified
Surface Mount: YES
Terminal Form: FLAT
Terminal Position: RADIAL
Time
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.500 INCH, ROHS COMPLIANT, M174, SOE, 4 PIN