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Microsemi Power Products Group VRF157FL

  • VRF157FL

VRF157FL RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2; VRF157FL

· Categories: IGBT
· Manufacturer: Microsemi Power Products Group
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 1755
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Content last revised on June 27, 2023

Manufacturer Part Number: VRF157FLRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: MICROSEMI CORPPackage Description: FLANGE MOUNT, R-CDFM-F2Pin Count: 2ECCN Code: EAR99Manufacturer: Microsemi CorporationRisk Rank: 5.61Case Connection: SOURCEConfiguration: SINGLEDS Breakdown Voltage-Min: 170 VDrain Current-Max (ID): 60 AFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: VERY HIGH FREQUENCY BANDJESD-30 Code: R-CDFM-F2JESD-609 Code: e1Number of Elements: 1Number of Terminals: 2Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 200 °CPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: YESTerminal Finish: TIN SILVER COPPERTerminal Form: FLATTerminal Position: DUALTime RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2