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Vishay Semiconductor Diodes Division VS-SD800C40L IGBT Module

#Vishay Semiconductor Diodes Division, #VS_SD800C40L, #IGBT_Module, #IGBT, VS-SD800C40L Rectifier Diode, 1 Phase, 1 Element, 1065A, 4000V V(RRM), Silicon, DO-200AB,; VS-SD800C40L

· Categories: IGBT Module
· Manufacturer: Vishay Semiconductor Diodes Division
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 2477
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VS-SD800C40L Specification

Sell VS-SD800C40L, #Vishay Semiconductor Diodes Division #VS-SD800C40L Stock, VS-SD800C40L Rectifier Diode, 1 Phase, 1 Element, 1065A, 4000V V(RRM), Silicon, DO-200AB,; VS-SD800C40L, #IGBT_Module, #IGBT, #VS_SD800C40L
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/vs-sd800c40l.html

Manufacturer Part Number: VS-SD800C40LRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: VISHAY INTERTECHNOLOGY INCPackage Description: O-CEDB-N2ECCN Code: EAR99HTS Code: 8541.10.00.80Manufacturer: Vishay IntertechnologiesRisk Rank: 2.35Application: HIGH VOLTAGE HIGH POWERConfiguration: SINGLEDiode Element Material: SILICONDiode Type: RECTIFIER DIODEForward Voltage-Max (VF): 1.95 VJEDEC-95 Code: DO-200ABJESD-30 Code: O-CEDB-N2Non-rep Pk Forward Current-Max: 12800 ANumber of Elements: 1Number of Phases: 1Number of Terminals: 2Operating Temperature-Max: 150 °COperating Temperature-Min: -40 °COutput Current-Max: 1065 APackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: ROUNDPackage Style: DISK BUTTONPeak Reflow Temperature (Cel): NOT SPECIFIEDRep Pk Reverse Voltage-Max: 4000 VReverse Current-Max: 50000 µASurface Mount: YESTerminal Form: NO LEADTerminal Position: ENDTime Rectifier Diode, 1 Phase, 1 Element, 1065A, 4000V V(RRM), Silicon, DO-200AB,

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