#Vishay Semiconductor Diodes Division, #VS_SD803C10S10C, #IGBT_Module, #IGBT, VS-SD803C10S10C Rectifier Diode, 1 Phase, 1 Element, 845A, 1000V V(RRM), Silicon,; VS-SD803C10S10C
Manufacturer Part Number: VS-SD803C10S10CRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: VISHAY INTERTECHNOLOGY INCPackage Description: O-CEDB-N2ECCN Code: EAR99HTS Code: 8541.10.00.80Manufacturer: Vishay IntertechnologiesRisk Rank: 5.76Additional Feature: FREE WHEELING DIODE, SNUBBER DIODEApplication: HIGH VOLTAGE FAST RECOVERY HIGH POWERConfiguration: SINGLEDiode Element Material: SILICONDiode Type: RECTIFIER DIODEForward Voltage-Max (VF): 1.89 VJESD-30 Code: O-CEDB-N2Non-rep Pk Forward Current-Max: 11830 ANumber of Elements: 1Number of Phases: 1Number of Terminals: 2Operating Temperature-Max: 125 °COperating Temperature-Min: -40 °COutput Current-Max: 845 APackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: ROUNDPackage Style: DISK BUTTONPeak Reflow Temperature (Cel): NOT SPECIFIEDRep Pk Reverse Voltage-Max: 1000 VReverse Current-Max: 45000 µAReverse Recovery Time-Max: 1 µsSurface Mount: YESTerminal Form: NO LEADTerminal Position: ENDTime Rectifier Diode, 1 Phase, 1 Element, 845A, 1000V V(RRM), Silicon,