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IXYS VTO110-12IO7 IGBT Module

#IXYS, #VTO110_12IO7, #IGBT_Module, #IGBT, VTO110-12IO7 Silicon Controlled Rectifier, 58A I(T)RMS, 110000mA I(T), 1200V V(DRM), 1200V V(RRM), 6 Element, MODULE-11;

· Categories: IGBT Module
· Manufacturer: IXYS
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 1546
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VTO110-12IO7 Specification

Sell VTO110-12IO7, #IXYS #VTO110-12IO7 Stock, VTO110-12IO7 Silicon Controlled Rectifier, 58A I(T)RMS, 110000mA I(T), 1200V V(DRM), 1200V V(RRM), 6 Element, MODULE-11; VTO110-12IO7, #IGBT_Module, #IGBT, #VTO110_12IO7
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/vto110-12io7.html

Manufacturer Part Number: VTO110-12IO7Pbfree Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: IXYS CORPPart Package Code: MODULEPackage Description: MODULE-11Pin Count: 11HTS Code: 8541.30.00.80Manufacturer: IXYS CorporationRisk Rank: 5.7Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDConfiguration: 3 PHASE BRIDGECritical Rate of Rise of Off-State Voltage-Min: 1000 V/usDC Gate Trigger Current-Max: 100 mADC Gate Trigger Voltage-Max: 1.5 VDesc. of Quick-Connects: 3G-3GRDesc. of Screw Terminals: 3AK-CA-CKHolding Current-Max: 200 mAJESD-30 Code: R-XUFM-X11JESD-609 Code: e4Leakage Current-Max: 5 mANon-Repetitive Pk On-state Cur: 1200 ANumber of Elements: 6Number of Terminals: 11On-state Current-Max: 110000 AOperating Temperature-Max: 125 °COperating Temperature-Min: -40 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDQualification Status: Not QualifiedRMS On-state Current-Max: 58 ARepetitive Peak Off-state Leakage Current-Max: 300 µARepetitive Peak Off-state Voltage: 1200 VRepetitive Peak Reverse Voltage: 1200 VSubcategory: Silicon Controlled RectifiersSurface Mount: NOTerminal Finish: Gold (Au) - with Nickel (Ni) barrierTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Silicon Controlled Rectifier, 58A I(T)RMS, 110000mA I(T), 1200V V(DRM), 1200V V(RRM), 6 Element, MODULE-11

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