#Diodes Inc, #ZDT6757TC, #IGBT_Module, #IGBT, ZDT6757TC Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 2-Element, NPN and PNP, Silicon, Plastic/Epoxy, 8 Pin, SM-
Manufacturer Part Number: ZDT6757TCPart Life Cycle Code: ObsoleteIhs Manufacturer: DIODES INCPackage Description: SMALL OUTLINE, R-PDSO-G8Pin Count: 8ECCN Code: EAR99Manufacturer: Diodes IncorporatedRisk Rank: 5.83Collector Current-Max (IC): 0.5 ACollector-Emitter Voltage-Max: 300 VConfiguration: SEPARATE, 2 ELEMENTSDC Current Gain-Min (hFE): 50JESD-30 Code: R-PDSO-G8JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 8Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: NPN AND PNPQualification Status: Not QualifiedSurface Mount: YESTerminal Finish: MATTE TINTerminal Form: GULL WINGTerminal Position: DUALTime Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 2-Element, NPN and PNP, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN