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Diodes Inc ZHB6792TC

  • ZHB6792TC
  • ZHB6792TC Power Bipolar Transistor, 1A I(C), 70V V(BR)CEO, 4-Element, NPN and PNP, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN; ZHB6792TC

    · Categories: IGBT
    · Manufacturer: Diodes Inc
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
    Submit RFQ to Get Price
    · Date Code: Please Verify on Quote
    . Available Qty: 1155
    MOQ: 1 PC
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    90-Day Warranty
    1-2 Days Lead Time
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    Whatsapp: 0086 189 2465 1869

    Content last revised on May 20, 2023

    Manufacturer Part Number: ZHB6792TCPart Life Cycle Code: ObsoleteIhs Manufacturer: DIODES INCPackage Description: SMALL OUTLINE, R-PDSO-G8Pin Count: 8ECCN Code: EAR99Manufacturer: Diodes IncorporatedRisk Rank: 5.27Collector Current-Max (IC): 1 ACollector-Emitter Voltage-Max: 70 VConfiguration: BRIDGE, 4 ELEMENTSDC Current Gain-Min (hFE): 150JESD-30 Code: R-PDSO-G8JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 4Number of Terminals: 8Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: NPN AND PNPQualification Status: Not QualifiedSurface Mount: YESTerminal Finish: MATTE TINTerminal Form: GULL WINGTerminal Position: DUALTime Power Bipolar Transistor, 1A I(C), 70V V(BR)CEO, 4-Element, NPN and PNP, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN